Acknowledgment The author acknowledges the financial support from

Acknowledgment The author acknowledges the financial support from the National Natural Science Foundation of China under

grant number 61076102 and Natural Science Foundation of Jiangsu Province under grant number BK2012614. References 1. Szkutnik PD, Karmous A, Bassani F, Ronda A, Berbezier I, Gacem K, Hdiy AE, Troyon M: Ge nanocrystals formation on SiO2 by dewetting: application to memory. Eur Phys J Appl Phys 2008, 41:103.CrossRef 2. Hdiy AE, Gacem K, Troyon M, Ronda A, Bassani F, Berbezier I: Germanium nanocrystal density and size effects on carrier storage and emission. J Appl Phys 2008, 104:063716.CrossRef 3. Akca IB, Dâna A, Aydinli A, Turan R: Comparison of electron and hole charge–discharge dynamics in germanium nanocrystal BX-795 ic50 flash memories. Appl Phys Lett 2008, 92:052103.CrossRef 4. Niquet YM, Allan G, Delerue C, Lannoo M: Quantum confinement in germanium nanocrystals. Appl Phys Lett 2000, 77:1182.CrossRef 5. Weissker H-C, Furthmüller J, Bechstedt F: Optical properties of Ge and Si nanocrystallites learn more from ab initio calculations. II. PF299 manufacturer Hydrogenated nanocrystallites. Phys Rev B 2002, 65:155328.CrossRef 6. Gacem K, Hdiy AE, Troyon M, Berbezier I, Szkutnik PD, Karmous A, Ronda A: Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon

dioxide. J Appl Phys 2007, 102:093704.CrossRef 7. Yang M, Chen TP, Wong JI, Ng CY, mafosfamide Liu Y, Ding L, Fung S, Trigg AD, Tung CH, Li CM: Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. J Appl Phys 2007, 10:124313.CrossRef 8. Mao LF: The quantum size effects on the surface potential of nanocrystalline silicon thin film transistors. Thin Sol Films 2010, 518:3396.CrossRef 9. Mao LF: Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-film transistors. J Vac Sci Technol

2010, 28:460.CrossRef 10. Ando Y, Itoh T: Calculation of transmission tunneling current across arbitrary potential barriers. J Appl Phys 1987, 61:1497.CrossRef 11. Adikaari AADT, Carey JD, Stolojan V, Keddie JL, Silva SRP: Bandgap enhancement of layered nanocrystalline silicon from excimer laser crystallization. Nanotechnology 2006, 17:5412.CrossRef 12. Yue G, Kong G, Zhang D, Ma Z, Sheng S, Liao X: Dielectric response and its light-induced change in undoped a-Si:H films below 13 MHz. Phys Rev B 1998, 57:2387.CrossRef 13. Matsuura H, Okuno T, Okushi H, Tanaka K: Electrical properties of n-amorphous/p-crystalline silicon heterojunctions. J Appl Phys 1984, 55:1012.CrossRef Competing interest The author declares that he has no competing interest.

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