In addition, nanopillar arrays with ultrasmall inter-pillar separations are fabricated and optically characterized. Methods Quartz substrates were first cleaned with acetone in an ultrasonic bath followed by isopropyl alcohol (IPA) and deionized water washing and finally blow-dried with a nitrogen gun. Subsequently, Au or Ag films with different thicknesses were deposited selleck products on quartz substrates with 4-nm titanium as the

adhesion layer by electron beam evaporation (Auto 306, Edwards, Crawley, UK) at a base pressure of about 3 × 10-7 mbar. In order to minimize the deposition-introduced roughness, low evaporation rates were applied (less than 0.03 nm/s). Afterwards, positive resist (S1805, Dow, Midland, MI, USA) was used to define nanopillar arrays on the

metal (Au or Ag) layer supported by a quartz substrate (refractive index = 1.46) with a laser holography system using a 325-nm helium-cadmium laser, serving as the IBM mask after development. During the IBM process (Microetch 1201, Veeco Instruments, Fludarabine supplier Plainview, NY, USA), argon was ionized and accelerated in an electric field to a high energy level. Argon ions struck the target materials while the sample plate rotated, ensuring homogeneous removal of waste material and straight sidewalls in all features with nearly zero undercutting. The work plate was cooled and tilted 10° to the normal of the incident beam to ensure even uniformity of the ion bombardment. www.selleckchem.com/products/apr-246-prima-1met.html At last, resist residue was removed by Microposit Remover 1165 (Rohm and Haas, Philadelphia, PA, USA) and cleaned up with IPA and deionized water. Detailed milling parameters are summarized in Table  1. The measured milling rate for Au and Ag is 23 and 61 nm/min, respectively.Compared with other fabrication methods, IL has idiographic advantages. For instance, IL allows for processing a complete substrate Rutecarpine with

one single exposure or several times of full-area exposures to define complex patterns. More importantly, IL can offer the possibility to construct homogeneous micro- or nanometer-structured surfaces on areas with wafer scale that is either impossible or extremely time consuming with other patterning techniques. In addition, one can precisely control the geometry of the arrays in a wide range by changing the processing parameters such as the incident angle and exposure time. As shown in Figure  1, nanopillars with varying profiles are achieved by accurately controlling the milling conditions. One can clearly observe cone-shaped particles in Figure  1a, which were achieved by oblique milling. In Figure  1b, normal round-shaped nanopillars are shown. Rough fringes are caused by redeposition which is almost inevitable in all ion-involved milling processes. Further, Figure  1c demonstrates nanopillars with ultrasmall separations.