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and genotoxicity of biogenic silver nanoparticles. J Phys Conf Ser 2013, 429:012020.CrossRef 38. Ghosh M, Chakrabarty A, Bandyopadhyay M, Mukherjee A: Multi-walled carbon nanotubes (MWCNT): induction of DNA damage in plant and mammalian cells. J Hazard Mater 2011, 197:327–336.CrossRef Competing interests The authors declare that they have no competing interest. Authors’ contribution SK conceptualized and designed all the experiments and acquired funding. SC synthesized nanoparticles, did characterization studies, and interpreted and discussed the results. AB performed the antimicrobial studies.

SC and SK drafted the manuscript. All authors read and approved the final manuscript.”
“Background A-1210477 Various new types of memories, such as phase change memory, spin-torque-transfer magnetic memory, and resistive random access memory (ReRAM), have been considered to replace conventional memory owing to their improved scaling limit and low power operation [1, 2]. ReRAM is the most promising candidate memory for next-generation non-volatile memory owing to the simple structure of the two-terminal type device and the fact that its cross-point array (4 F2) structure can be significantly scaled down. However, ReRAM exhibits large resistive-switching Trichostatin A fluctuation and suffers from leakage current in cross-point array

operation. To mitigate the resistive switching Branched chain aminotransferase fluctuation in ReRAM, various analyses of switching behaviors and structural solutions have been suggested [3–8]. The resistive switching uniformity is highly affected by oxide states and filament formation properties. Although various ReRAM structures have been investigated and the switching variability has been improved, ReRAMs still retain non-uniform resistive switching parameters of resistance state and voltage when the devices operate with low currents (approximately 50 μA) of devices. In addition, the currents flowing through unselected cells during the read operations are a severe problem in cross-point array ReRAMs. When a high-resistance state (HRS) cell is read, it is biased with VRead, while the unselected neighboring low-resistance state (LRS) cells are biased with ½VRead.